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1N6096R PDF File ( Datasheet )

GeneSiC Semiconductor
1N6096R
Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 40V V(RRM), Silicon, DO-4
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1N6096R Description
Silicon Power Schottky Diode

Silicon Power Schottky Diode Features High Surge Capability Types from 30 V to 40V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6095 thru 1N6096R VRRM = 30 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N6095 (R) 1N6096 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Con

GeneSiC
GeneSiC
Schottky Power Diode

Naina Semiconductor Ltd. Schottky Power Diode, 25A Features Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N6095 thru 1N6096R DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25oC tp =

Naina Semiconductor
Naina Semiconductor




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