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| 1N6096R Description |
| Silicon Power Schottky Diode
Silicon Power Schottky Diode
Features High Surge Capability Types from 30 V to 40V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N6095 thru 1N6096R
VRRM = 30 V - 40 V IF = 25 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N6095 (R)
1N6096 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Con
GeneSiC |
| Schottky Power Diode
Naina Semiconductor Ltd.
Schottky Power Diode, 25A
Features
Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
1N6095 thru 1N6096R
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25oC tp =
Naina Semiconductor |
| Related Part Number |
1N6019 | 1N6310D 1N6050A | 1N6653 1N6509+JAN | 1N6037 |
| DataSheet.es | 2020 | Contacto |