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1N5831R PDF File ( Datasheet )

GeneSiC Semiconductor
1N5831R
Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 35V V(RRM), Silicon, DO-203AA
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1N5831R Description
Silicon Power Schottky Diode

Silicon Power Schottky Diode Features High Surge Capability Types up to 40V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous

GeneSiC
GeneSiC
SCHOTTKY DIODES

Transys Electronics LIMITED 1N5829(R) THRU 1N6096(R) SCHOTTKY DIODES STUD TYPE Features High Surge Capability Types up to 40V VRRM 25 A 25Amp Rectifier 20-40 Volts DO-4 Maximum Ratings Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +175 B N MC Part Number 1N5829( R ) 1N5830( R ) 1N6095( R ) 1N5831( R ) 1N6096( R ) Maximum Recurrent Peak Reverse Voltage 20V 25V 30V 35V 40V Maximum RMS Voltage 14V 17V 21V 25V 28V Maximum DC Blocking Voltage 20V 25V 30V 35V 40V Electr

TRANSYS
TRANSYS




Related Part Number

1N5925BP  |  1N5597TX  

1N5933  |  1N5645  

1N5944A  |  1N5632  



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