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1N5530B PDF File ( Datasheet )

Microchip
1N5530B
Diode Zener Single 10V 5% 0.5W 2-Pin Axial DO-35 Bag
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1N5530B Description
LOW REVERSE LEAKAGE CHARACTERISTICS

1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500, 437 LOW REVERSE LEAKAGE CHARACTERISTICS LOW NOISE CHARACTERISTICS DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 500 mW @ +50°C Power Derating: 4 mW , °C above +50°C Forward Voltage @ 200mA: 1.1 volts maximum ELECTRICAL CHARACTERISTICS @ 25°C B-C-D SUFFIX MAXIMUM DC ZENER CURRENT 1ZM 1N5518 thru 1N5546D and 1N5518B-1 t

Compensated Deuices Incorporated
Compensated Deuices Incorporated
Diode Zener Single 10V 5% 400mW 2-Pin DO-35

New Jersey Semiconductor
New Jersey Semiconductor




Related Part Number

1N5932  |  1N5943  

1N5947BP  |  1N5944  

1N5711UB  |  1N5940BP-TPX01  



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