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1N3600UR PDF File ( Datasheet )

Microchip
1N3600UR
50V 200Ma Signal Or Computer Diode Round-End Do-213Aa Rohs Compliant: Yes |Microchip Technology 1N3600UR

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NAC Semi1994.71Visit Site
Microchip249Visit Site
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Fmall Co., Limited14,3303.4153.1946Visit Site
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1N3600UR Description
SWITCHING DIODE

1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500, 231 SWITCHING DIODE HERMETICALLY SEALED METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 1N4150UR-1 1N3600UR CDLL4150 CDLL3600 MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = + 25°C Derating: 3.1 mA dc, °C Above TEC = + 110°C Forward Surge Current: 4A, (tp = 1 s); 0.5A (tp = 1s) ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci ed. T
Compensated Deuices Incorporated
Compensated Deuices Incorporated
SWITCHING DIODE

1N4150UR-1 AVAILABLE IN JAN, PER MIL-PRF-19500, 231 SWITCHING DIODE HERMETICALLY SEALED METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION JANTX, AND JANTXV 1N4150UR-1 1N3600UR CDLL4150 CDLL3600 MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = + 25°C Derating: 3.1 mA dc, °C Above TEC = + 110°C Forward Surge Current: 4A, (tp = 1 s); 0.5A (tp = 1s) ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.
Microsemi Corporation
Microsemi Corporation



Related Part Number

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