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| 1N3213 Description |
| Silicon Rectifier Diodes
www.vishay.com
1N3208 Series
Vishay Semiconductors
Silicon Rectifier Diodes, (Stud Version) 15 A
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV)
15 A
FEATURES
Low thermal impedance
High case temperature
Excellent reliability
Maximum design flexibility
Can be made to meet stringent military, aerospace and other high reliability requirements
Material categorization: For definitions of compliance please see www.vishay.com, doc 99912
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST COND
Vishay |
| Silicon Standard Recovery Diode
Silicon Standard Recovery Diode
Features High Surge Capability Types from 400 V to 600 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3212 thru 1N3214R
VRRM = 400 V - 600 V IF = 15 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3212 (R)
1N3213 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking vol
GeneSiC |
| Related Part Number |
1N3601 | 1N3900AR 1N3997A | 1N3468 1N3124 | 1N3903A |
| DataSheet.es | 2020 | Contacto |