S9014 Buy Now and Stock

SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co

S9014 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 45 50 5.0 100 0.4 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C E

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES - - - Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) Production specification S9014 Pb Lead-free APPLICATIONS - Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION Type No. S9014 Marking J6 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEB

1. Power dissipation: PCM: 0.31 W (Tamb=25℃) 2. Collector current: ICM: 0.03 A 3. Collector-base voltage : V(BR)CBO: 30 V

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES - Collec tor Current.(IC= 30mA） - Power dissipation.(PC=200mW) Production specification S 9011 Pb Lead-free APPLICATIONS -