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S9014 Buy Now and Stock |
PDF S9014 Datasheet ( Hoja de datos ) |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S9014 | Pre-Amplifier / Low Level & Low Noise
SS9014
SS9014
Pre-Amplifier, Low Level & Low Noise
High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co
|  Fairchild Semiconductor | amplifier |
| 2 | S9014 | NPN Silicon Transistor
|  AUK corp | transistor |
| 3 | S9014 | NPN General Purpose Transistors
S9014
NPN General Purpose Transistors
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 45 50 5.0 100 0.4 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C
E
|  Weitron Technology | transistor |
| 4 | S9014 | Silicon Epitaxial Planar Transistor
|  Galaxy Semi | transistor |
| 5 | S9014 | Silicon Epitaxial Planar Transistor
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
- - - Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W)
Production specification
S9014
Pb
Lead-free
APPLICATIONS
- Per-Amplifier low level & low noise. SOT-23
ORDERING INFORMATION
Type No. S9014 Marking J6 Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEB
|  BL | transistor |
S9014 PDF Скачать
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Electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | S9014LT1 | SOT-23 Plastic-Encapsulate Transistors [ ETC ] |  |  |
| 2 | S9014 | NPN General Purpose Transistors [ Weitron Technology ] | | |
| 3 | S9014 | Silicon Epitaxial Planar Transistor [ Galaxy Semi ] | | |
| 4 | S9014 | Silicon Epitaxial Planar Transistor [ BL ] | | |
Рекомендуемые электронные компоненты |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | S9011 | NPN Transistor 1. Power dissipation: PCM: 0.31 W (Tamb=25℃) 2. Collector current: ICM: 0.03 A 3. Collector-base voltage : V(BR)CBO: 30 V |  WEJ | |
| 2 | S9011 | NPN Silicon Epitaxial Planar Transistor BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
- Collec tor Current.(IC= 30mA） - Power dissipation.(PC=200mW)
Production specification
S
9011
Pb
Lead-free
APPLICATIONS
- | BL | |
| 3 | S9012 | TO-92 Plastic-Encapsulate Transistors | ETC | |
| 4 | S9012 | PNP General Purpose Transistors | Weitron Technology | |
| Esta es una página para buscar información de compra e inventario para S9014. Para productos compatibles y de reemplazo con S9014, descargue la hoja de datos para obtener más detalles. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| 2SC1815 | Кремниевый эпитаксиальный планарный транзистор NPN для коммутации и усилителей частоты. Транзистор подразделяется на четыре группы: O, Y, G и L, в зависимости от его коэффициента усиления по постоянному току. В качестве дополнительного типа рекомендуется PNP-транзистор ST 2SA1015. |
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