P600M Datasheet PDF

P600A-P600M High-reliability discrete products and engineering services since 1977 6A STANDARD RECOVERY RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn, Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Symbols P600A P600B P600D P60

P600A - P600M 6.0 AMPS Silicon Rectifiers P-600 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free. solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode High temperature soldering guarantee

TH97, 10561QM TW00, 17276EM IATF 0060636 SGS TH07, 1033 P600A - P600M SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts D6 FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb , RoHS Free MECHANICAL DATA : * Case : Void-free molded plastic body * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead so

P6015AV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST C

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P60N03LDG TO-252 (DPAK) Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 12.8m ID 60A D G 1. GATE 2. DRAIN 3. SOURCE S A

P60B6SN 000000 Typical Output Characteristics Transfer Characteristics Static Drain-Source On-state Resistance vs Drain Current Static Drain-Source On-state Resistance vs Case Temperature Gate Thr

Nch P60B6EN PowerMOSFET -外 OUTLINE Package：FB Unit：mm 60V60A 特長 煙面 タイプ 煙低オン抵抗 煙１０V 動 煙低容量 Feature 煙SMD 煙LowRON 煙10VGateDrive 煙LowCapacitanc