(PDF) P0460ATFS Datasheet - N-Channel Enhancement Mode MOSFET

P0460ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Energy3 TC = 25 °C TC

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N-Channel Enhancement Mode MOSFET

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P0460AT

N-Channel Enhancement Mode MOSFET

P0460AS , P0460AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-263 TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PA

P0460ATF

N-Channel Enhancement Mode MOSFET

P0460ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwis

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2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

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P0460ATFS Datasheet PDF

PDF P0460ATFS MOSFET ( Hoja de datos )

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P0460ATFS	N-Channel Enhancement Mode MOSFET P0460ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Energy3 TC = 25 °C TC