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NRVB440MFS Datasheet PDF

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onsemi NRVB440MFSWFT3G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 40V V(RRM), Silicon


PDF NRVB440MFS Rectifier ( Hoja de datos )

P/N Descripción Fabr. PDF
NRVB440MFS SWITCHMODE Power Rectifiers

MBR440MFS, NRVB440MFS SWITCHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss , High Efficiency New Package Provides Capability of Inspection and Probe After Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175°C Operating Junction Temperature NRVB Prefix for Automotive and Other Applications Requiring Unique Si
 		ON Semiconductordatasheet NRVB440MFS pdf


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SWITCHMODE Power Rectifiers

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Electronic components

P/N Descripción Fabr. PDF
NRVB440MFSWFT3GSWITCHMODE Power Rectifiers

MBR440MFS, NRVB440MFS SWITCHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss , High Efficiency New Package Provides Capability of Inspection
ON Semiconductor
datasheet NRVB440MFSWFT3G pdf
NRVB440MFST1GSWITCHMODE Power Rectifiers

MBR440MFS, NRVB440MFS SWITCHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss , High Efficiency New Package Provides Capability of Inspection
ON Semiconductor
datasheet NRVB440MFST1G pdf
NRVB440MFST3GSWITCHMODE Power Rectifiers

ON Semiconductor
datasheet NRVB440MFST3G pdf
NRVB440MFSWFT1GSWITCHMODE Power Rectifiers

ON Semiconductor
datasheet NRVB440MFSWFT1G pdf

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NRVBA140Surface Mount Schottky Power Rectifier

MBRA140, NRVBA140 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the
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NRVBB2535CTLGSWITCHMODE Power Rectifier

MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal to silicon p
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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

 SEMTECH
Semtech		 datasheet 2SC1815 pdf


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