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MMA712 Datasheet PDF

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MACOM MMA712-2012
Amplifier, MMIC, DC to 12 GHz, 11 dBm, 12 dB


PDF MMA712 Amplifier ( Hoja de datos )

P/N Descripción Fabr. PDF
MMA712 DC to 12 GHz Amplifier

MMA712 DC to 12 GH- Amplifier 712 2012 PACKAGE 712 CM22 PACKAGE NOT TO SCALE Description: The MMA712 is a fully matched Darlington Amplifier, constructed with reliable InGaP-GaAs HBT technology. Exhibits extremely flat gain response over the operating band. Features: DC - 12 GH- Broadband Gain Block. Flat gain over bandwidth +, - 1 dB. 50 Ohm match Input, Output RF Specifications (TA =
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DC to 12 GHz Amplifier

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Electronic components

P/N Descripción Fabr. PDF
MMA7361LR1Three Axis Low-g Micromachined Accelerometer

Freescale Semiconductor Technical Data ±1.5g, ±6g Three Axis Low-g Micromachined Accelerometer The MMA7361L is a low power, low profile capacitive micromachined accelerometer featuring signal condi
Freescale Semiconductor
datasheet MMA7361LR1 pdf
MMA7361LCThree Axis Low-g Micromachined Accelerometer

Freescale Semiconductor Data Sheet: Technical Data Document Number: MMA7361LC Rev 1, 08, 2011 ±1.5g, ±6g Three Axis Low-g Micromachined Accelerometer The MMA7361LC is a low power, low profile capa
Freescale Semiconductor
datasheet MMA7361LC pdf
MMA7361LR2Three Axis Low-g Micromachined Accelerometer

Freescale Semiconductor
datasheet MMA7361LR2 pdf
MMA7361LCR1Three Axis Low-g Micromachined Accelerometer

Freescale Semiconductor
datasheet MMA7361LCR1 pdf

Componentes electrónicos recomendados

P/NDescripciónFabr.PDF
MMA7260Three Axis Low-g Micromachined Accelerometer

• Selectable Sensitivity (1.5g/2g/4g/6g) • Low Current Consumption: 500 μA • Sleep Mode: 3 μA • Low Voltage Operation: 2.2 V – 3.6 V
NXPdatasheet MMA7260 pdf
MMA6222AKEGAnalog Dual Axis Micromachined Accelerometer

Freescale Semiconductor Technical Data MMA6222AKEG Rev 0, 12, 2009 Analog Dual Axis Micromachined Accelerometer The MMA62XXAKEG series of dual axis (X and Y) silicon capacitive, micromachined accele
Freescale Semiconductordatasheet MMA6222AKEG pdf
MMAD1108Monolithic Diode Array

Motorola Semiconductorsdatasheet MMAD1108 pdf
MMAD1109Monolithic Diode Arrays

Motorola Semiconductorsdatasheet MMAD1109 pdf


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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

SEMTECH
Semtech
datasheet 2SC1815 pdf


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