MMA707 Datasheet PDF

MMA707 1 Watt InGaP HBT Ampli er FEATURES High Output Power: +31 dBm (Typ) High 3rd Order IP: +50 dBm (Typ) High Dynamic Range: 97 dB (Typ) 3mm square QFN plastic package MMA707 -3030 3mm x 3mm square DESCRIPTION The MMA707-3030 is a Power InGaP HBT device that is designed to provide moderate power levels from 100 MH- to 2.5 GHz. Best operation is obtained across narrow bandwidths, typical

• Selectable Sensitivity (1.5g/2g/4g/6g) • Low Current Consumption: 500 μA • Sleep Mode: 3 μA • Low Voltage Operation: 2.2 V – 3.6 V

Freescale Semiconductor Data Sheet: Technical Data Document Number: MMA7361LC Rev 1, 08, 2011 ±1.5g, ±6g Three Axis Low-g Micromachined Accelerometer The MMA7361LC is a low power, low profile capa

• Selectable Sensitivity (1.5g/2g/4g/6g) • Low Current Consumption: 500 μA • Sleep Mode: 3 μA • Low Voltage Operation: 2.2 V – 3.6 V

Freescale Semiconductor Technical Data MMA6222AKEG Rev 0, 12, 2009 Analog Dual Axis Micromachined Accelerometer The MMA62XXAKEG series of dual axis (X and Y) silicon capacitive, micromachined accele