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KTD1304 Buy Now and Stock |
PDF KTD1304 Datasheet ( Hoja de datos ) |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | KTD1304 | Silicon NPN transistor
KTD1304
Rev.E Mar.-2016
DATA SHEET
描述 , Descriptions SOT-23 塑封封 NPN 半 三 管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 , Features
E-B 反向 穿 高,反向放大高, 通 阻低。 High VEBO, high reverse hFE, low on resistance.
用途 , Applications
用于音 音 路 Audio muting application.
部等效 路 , Equivalent Circuit
引脚排列 ,
| ![]() BLUE ROCKET ELECTRONICS | transistor |
2 | KTD1304 | NPN Silicon Epitaxial Planar Transistor
| ![]() Galaxy Microelectronics | transistor |
3 | KTD1304 | NPN Transistor
KTD31 04
TRANSISTOR (NPN)
SOT-23
FEATURES ·High emitter-base voltage ·low on resistance
MARKING: MAX
1. BASE 2. EMITTER 3.COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temper
| ![]() JinYu | transistor |
4 | KTD1304 | NPN Transistors
| ![]() Kexin | transistor |
5 | KTD1304 | NPN Transistor
Plastic-Encapsulate Transistors
FEATURES
High emitter-base voltage low on resistance
Marking: MAX
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
VCBO VCEO VEBO
IC PC TJ Tstg
Value
25 20 12 300 0.2 150 -55to
| ![]() HOTTECH | transistor |
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Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | KTD1302 | TRANSISTOR [ TY Semiconductor ] | ![]() | ![]() |
2 | KTD1302 | EPITAXIAL PLANAR NPN TRANSISTOR [ KEC ] | ![]() | ![]() |
3 | KTD1304 | EPITAXIAL PLANAR NPN TRANSISTOR [ KEC ] | ![]() | ![]() |
4 | KTD1347 | EPITAXIAL PLANAR NPN TRANSISTOR [ KEC ] | ![]() | ![]() |
Рекомендуемые электронные компоненты |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | KTD1302 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
AUDIO MUTING APPLICATION.
FEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA). Low on Resistance :RON=0.6 (Typ | ![]() KEC | ![]() |
2 | KTD1302 | NPN Transistors SMD Type
NPN Transistors KTD1302
Transistors
- Features
● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter | ![]() Kexin | ![]() |
3 | KTD1302 | TRANSISTOR | ![]() Jin Yu Semiconductor | ![]() |
4 | KTD1302 | TRANSISTOR | ![]() TY Semiconductor | ![]() |
Esta es una página para buscar información de compra e inventario para KTD1304. Para productos compatibles y de reemplazo con KTD1304, descargue la hoja de datos para obtener más detalles. |
Número de pieza | Descripción | Fabricantes | |
2SC1815 | Кремниевый эпитаксиальный планарный транзистор NPN для коммутации и усилителей частоты. Транзистор подразделяется на четыре группы: O, Y, G и L, в зависимости от его коэффициента усиления по постоянному току. В качестве дополнительного типа рекомендуется PNP-транзистор ST 2SA1015. |
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