J412 Datasheet PDF

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Teledyne Relays J412-26L

Electromechanical Relay DPDT 1ADC/0.25AAC 26.5VDC 1.56KOhm Through Hole

PDF J412 ( Hoja de datos )

P/N	Descripción	Fabr.	PDF
J412	P-Channel MOSFET, 2SJ412 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance: \|Yfs\| = 7.7 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA

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P-Channel MOSFET, 2SJ412

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P/N	Descripción	Fabr.	PDF
2SC1815	Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.	Semtech

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