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J309 Datasheet PDF

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onsemi J309
Uhf Band Si N-channel Rf Small Signal Jfet TO-92


PDF J309 ( Hoja de datos )

P/N Descripción Fabr. PDF
J309 N-Channel JFETs

J, SST, U308 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J308 J309 J310 SST308 SST309 SST310 U309 U310 VGS(off) (V) 1 to 6.5 1 to 4 2 to 6.5 1 to 6.5 1 to 4 2 to 6.5 1 to 4 2.5 to 6 J308 J309 J310 SST308 SST309 SST310 U309 U310 V(BR)GSS Min (V) 25 25 25 25 25 25 25 25 gfs Min (mS) 8 10 8 8 10 8 10 10 IDSS Min (mA) 12 12 24 12 12 24 12 24 F
Vishaydatasheet J309 pdf
J309 Diode, Rectifier
American Micro semiconductordatasheet J309 pdf
J309 N-Channel Silicon Junction Field-Effect Transistor

01, 99 Mixers Oscillators VHF, UHF Amplifiers B-61 J308, J309 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 25 V 10 mA 360 mW 3.27 mW, °C At 25°C free air temperature: Static Electrical Characteristics Gate Source
InterFETdatasheet J309 pdf
J309 N-Channel RF Amplifier
Fairchild Semiconductordatasheet J309 pdf
J309 JFET VHF/UHF Amplifiers

J309, J310 Preferred Device JFET VHF, UHF Amplifiers N Channel Depletion Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above = 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 65 to +125 65 to +150 Unit
ON Semiconductordatasheet J309 pdf


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N-Channel JFETs

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Electronic components

P/N Descripción Fabr. PDF
J304N-Channel JFETs

N-Channel JFETs J304, 305 Vishay Siliconix PRODUCT SUMMARY Part Number J304 J305 VGS(off) (V) 2 to 6 0.5 to 3 V(BR)GSS Min (V) 30 30 gfs Min (mS) 4.5 3 IDSS Min (mA) 5 1 FEATURES D Excel
Vishay
datasheet J304 pdf
J308JFET VHF/UHF Amplifiers

J308 JFET VHF, UHF Amplifiers N Channel Depletion MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junct
ON Semiconductor
datasheet J308 pdf
J305N-Channel JFETs

Vishay
datasheet J305 pdf
J337P-Channel MOSFET, 2SJ337

Sanyo Semicon Device
datasheet J337 pdf

Componentes electrónicos recomendados

P/NDescripciónFabr.PDF
J308JFET VHF/UHF Amplifiers

J308 JFET VHF, UHF Amplifiers N Channel Depletion MAXIMUM RATINGS Rating Drain Source Voltage Gate Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junct
ON Semiconductordatasheet J308 pdf
J305N-Channel JFETs

N-Channel JFETs J304, 305 Vishay Siliconix PRODUCT SUMMARY Part Number J304 J305 VGS(off) (V) 2 to 6 0.5 to 3 V(BR)GSS Min (V) 30 30 gfs Min (mS) 4.5 3 IDSS Min (mA) 5 1 FEATURES D Excel
Vishaydatasheet J305 pdf
J304N-Channel JFETs

Vishaydatasheet J304 pdf
J304RRN-CHANNEL SILICON JUNCTION FET

New Jersey Semiconductordatasheet J304RR pdf


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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

SEMTECH
Semtech
datasheet 2SC1815 pdf


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