IRFP244 Datasheet PDF

Power MOSFET IRFP244, SiHFP244 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 63 12 39 Single 0.28 TO-247 D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV, dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Simple Drive Requirements

$GYDQFHG 3RZHU 026)(7 IRFP244 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 250V Lower RDS(ON): 0.214Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drai

Semiconductor IRFP244, IRFP245, IRFP246, IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are desi

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP247 FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source O

• Advanced process technology • Key parameters optimized for PDP Sustain & Energy Recovery applications • Low EPULSE rating to reduce the power

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability