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PDF GM72V66841ET Datasheet ( Hoja de datos )

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	GM72V66841ET	2M x 8-Bit x 4 Bank SDRAM Description The GM72V66841ET, ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET, ELT provides four banks of 2,097,152 word by 8 bit to realize high bandwidth with the Clock frequency up to 143 Mhz. Features *	Hynix Semiconductor	data
2	GM72V66841ET	2M x 8-Bit x 4 Bank SDRAM	LG Semicon	data

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2M x 8-Bit x 4 Bank SDRAM

Electronic components

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GM72V66841Exx	2M x 8-Bit x 4 Bank SDRAM [ Hynix Semiconductor ]
2	GM72V661641D	1M word x 16-Bit x 4 Bank SDRAM [ LG Semicon ]
3	GM72V161621ELT	524288 word x 16 Bit x 2 Bank SDRAM [ LG ]
4	GM72V661641DLI	1M word x 16-Bit x 4 Bank SDRAM [ LG Semicon ]

Рекомендуемые электронные компоненты

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GM72V66841ELT	2M x 8-Bit x 4 Bank SDRAM Description The GM72V66841ET, ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring	Hynix Semiconductor
2	GM72V66841ELT	2M x 8-Bit x 4 Bank SDRAM	LG Semicon
3	GM72V66841ET	2M x 8-Bit x 4 Bank SDRAM	Hynix Semiconductor
4	GM72V66841ET	2M x 8-Bit x 4 Bank SDRAM	LG Semicon

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Número de pieza	Descripción	Fabricantes	PDF
2SC1815	Кремниевый эпитаксиальный планарный транзистор NPN для коммутации и усилителей частоты. Транзистор подразделяется на четыре группы: O, Y, G и L, в зависимости от его коэффициента усиления по постоянному току. В качестве дополнительного типа рекомендуется PNP-транзистор ST 2SA1015.	Semtech	PDF

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