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EMB12N03H Datasheet PDF

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VBsemi EMB12N03HR-VB
N, 30V, 80A, Rds(on), 7M¦¸@10V, 9M¦¸@4.5V, 20VGS(¡ÀV); 1.7VTH(V) : DFN8(5X6)


PDF EMB12N03H Transistor ( Hoja de datos )

P/N Descripción Fabr. PDF
EMB12N03H Field Effect Transistor

N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 25A G UIS, Rg 100% Tested S Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL EMB12N03H LIMITS UNIT Gate Source Voltage VGS ±20 Continuous Drain Current Pulsed
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Field Effect Transistor

datasheet EMB12N03H download

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P/N Descripción Fabr. PDF
EMB12N04VField Effect Transistor

N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12.8mΩ ID 18A G UIS, Rg 100% Tested S Pb Free Lead Plating & Halogen Free
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datasheet EMB12N04V pdf
EMB12N03VField Effect Transistor

N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 18.5A G UIS, Rg 100% Tested S Pb Free Lead Plating & Halogen
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EMB12N03AField Effect Transistor

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EMB30P03VATField Effect Transistor

P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 30mΩ ID 8A G S Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM
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EMB20P03VATField Effect Transistor

P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 8.7A G S Pb Free Lead Plating & Halogen Free ABSOLUTE M
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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

 SEMTECH
Semtech		 datasheet 2SC1815 pdf


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