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E2S Datasheet PDF |
PDF E2S ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| E2S | CRYSTAL
E2S Series
RoHS Compliant (Pb-Free) HC-49, UP package AT or BT cut available Resistance weld seal Tight tolerance, stability Tape and reel available
E2S
H 4.50 L 13.30 W 4.85
CRYSTAL NOTES
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Electronic components |
| P/N | Descripción | Fabr. | |
| ESDA-1K | EOS and ESD Transil protection ESDA-1K
EOS and ESD Transil™ protection for charger and battery port
Features
- Breakdown voltage: 12 V, 18 V - Unidirectional device - High peak power dissipation: 450 W (8, 20 s
waveform) - ESD | ![]() | ![]() |
| E13007 | 700V, 8A, NPN Transistor ( KSE13007 ) High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control | ![]() | |
| ENC1J-D28-R00064 | Rotary Optical Encoder | ![]() | ![]() |
| EPL3015-223ML | Shielded Power Inductors | ![]() | ![]() |
Componentes electrónicos recomendados |
| P/N | Descripción | Fabr. | |
| E2SW261M | Super-compact Proximity Sensor • Only 5.5 × 5.5 mm with a built-in Amplifier.
• Maximum sensing distance: 2.5 mm. Stable detection even with
workpiece fluctuations.
• Response frequency: 1 kHz.
• Low current consumptio | ![]() |
| Esta es una página para buscar información de compra e inventario para E2S. Para productos compatibles y de reemplazo con E2S, descargue la hoja de datos para obtener más detalles. |
| P/N | Descripción | Fabr. | |
| 2SC1815 | Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. |
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