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PDF CDP1821C3 Datasheet ( Hoja de datos ) |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CDP1821C3 | High-Reliability CMOS 1024-Word x 1-Bit Static RAM
CDP1821C, 3
March 1997
High-Reliability CMOS 1024-Word x 1-Bit Static RAM
Description
The CDP1821C, 3 is a 1024-word x 1-bit CMOS silicon-on-sapphire (SOS), fully static, random-access memory designed for use in CDP1800 microprocessor systems. This device has a recommended operating voltage range of 4V to 6.5V. The output state of the CDP1821C, 3 is a function of the input address and chip-select
|  Intersil Corporation | cmos |
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| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | CDP1821C | High-Reliability CMOS 1024-Word x 1-Bit Static RAM CDP1821C, 3
March 1997
High-Reliability CMOS 1024-Word x 1-Bit Static RAM
Description
The CDP1821C, 3 is a 1024-word x 1-bit CMOS silicon-on-sapphire (SOS), fully static, random-access memory designe | Intersil Corporation | |
| 2 | CDP1821C3 | High-Reliability CMOS 1024-Word x 1-Bit Static RAM CDP1821C, 3
March 1997
High-Reliability CMOS 1024-Word x 1-Bit Static RAM
Description
The CDP1821C, 3 is a 1024-word x 1-bit CMOS silicon-on-sapphire (SOS), fully static, random-access memory designe | Intersil Corporation | |
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