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Analog Devices MAX8113EUST


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AX8113 Ultra-sensitive Hall Effect Switch

AX8113 MicroPower, Ultra-sensitive Hall Effect Switch GENERAL DESCRIPTION AX8113 is a Hall Effect sensor device with Dual output driver, mainly designed for battery operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). For AX8113, the total operation power is down to 10uW in the 1.8V supply. Either north or South Pole of sufficient strength will turn the output on. The output
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Ultra-sensitive Hall Effect Switch

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Electronic components

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AX8104Ultra-sensitive Hall Effect Switch

AX8104 MicroPower, Ultra-sensitive Hall Effect Switch GENERAL DESCRIPTION AX8104 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery operation, hand-held
AXElite
datasheet AX8104 pdf
AX8111Ultra-sensitive Hall Effect Switch

AX8111 MicroPower, Ultra-sensitive Hall Effect Switch GENERAL DESCRIPTION AX8111 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery operation, hand-held
AXElite
datasheet AX8111 pdf
AX8101Ultra-sensitive Hall Effect Switch

AXElite
datasheet AX8101 pdf
AX8112Ultra-sensitive Hall Effect Switch

AXElite
datasheet AX8112 pdf

Componentes electrónicos recomendados

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AX8052F100Ultra-Low Power Microcontroller

AX8052F100 Ultra-Low Power Microcontroller OVERVIEW The AX8052F100 is a single chip ultra lowpower microcontroller primarily for use in radio applications. The AX8052F100 contains a high speed microc
ON Semiconductordatasheet AX8052F100 pdf
AX8052F143SoC Ultra-Low Power RF-Microcontroller

DATASHEET AX8052F143 SoC Ultra-Low Power RFMicrocontroller for RF Carrier Frequencies in the Range 701050 MHz Version 1.2a 2 Document Document Document Product Type Status Version Datasheet Versio
AXSEMdatasheet AX8052F143 pdf
AX8052F131SoC Ultra-Low Power RF-Microcontroller

AXSEMdatasheet AX8052F131 pdf
AX8052F151SoC Ultra-Low Power RF-Microcontroller

On Semiconductordatasheet AX8052F151 pdf


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2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

SEMTECH
Semtech
datasheet 2SC1815 pdf


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