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AS4PK Datasheet PDF |
PDF AS4PK Rectifier ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| AS4PK | High Current Density Standard Avalanche Surface Mount Rectifiers
AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM
www.vishay.com
Vishay General Semiconductor
High Current Density Standard Avalanche Surface Mount Rectifiers
FEATURES
eSMP ® Series
K
Very low profile - typical height of 1.1 mm Ideal for automated placement Glass passivated chip junction Controlled avalanche characteristics Low leakage current
Available
1 2
High forward surge capability AEC-Q101 qu
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Electronic components |
| P/N | Descripción | Fabr. | |
| AS4C4M16S-6BIN | 64M - (4M x 16 bit) Synchronous DRAM AS4C4M16S
Confidential
64M (4M x 16 bit) Synchronous DRAM (SDRAM)
FBGA - Rev 2, May. , 2014
Features
Fast access time from clock: 5.4 ns Fast clock rate: 166 MH- Fully synchronous operation In | ![]() | |
| AS4C256M16D3A-12BIN | 256M x 16 bit DDR3 Synchronous DRAM AS4C256M16D3A-12BIN
Revision History 4Gb AS4C256M16D3A-12BIN - 96 ball FBGA PACKAGE
Revision Details Rev 1.0 Preliminary datasheet
Date May. 2016
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA | ![]() | |
| AS4C128M16D3A-12BIN | 2Gb Double-Data-Rate-3 DRAM | ![]() | |
| AS4C64M16D3 | 1Gb (64M x 16) bit DDR3 Synchronous DRAM | ![]() |
Componentes electrónicos recomendados |
| P/N | Descripción | Fabr. | |
| AS4C32M16SB-7TCN | CMOS synchronous 512Mb SDRAM AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN
Revision History AS4C32M16SB-7TCN, AS4C32M16SB-7TIN, AS4C32M16SB-6TIN- 54pin TSOPII PACKAGE
Revision Details Rev 1.0 Preliminary datasheet
Date Ju | ![]() | |
| AS4C32M16SB-7TIN | CMOS synchronous 512Mb SDRAM AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN
Revision History AS4C32M16SB-7TCN, AS4C32M16SB-7TIN, AS4C32M16SB-6TIN- 54pin TSOPII PACKAGE
Revision Details Rev 1.0 Preliminary datasheet
Date Ju | ![]() | |
| AS4C32M16SB-6TIN | CMOS synchronous 512Mb SDRAM | ![]() | |
| AS431C | Precision Adjustable Shunt Regulator | ![]() |
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| P/N | Descripción | Fabr. | |
| 2SC1815 | Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. |
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