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APT5015 Datasheet PDF |
PDF APT5015 MOSFET ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| APT5015 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5015BVR
500V 32A 0.150Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247
Faster Switching Lower Leakage
100% Avalanche Tested Popular TO
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Electronic components |
| P/N | Descripción | Fabr. | |
| APT5025BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT5025BN 500V
®
23.0A 0.25Ω 21.0A 0.30Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT5030BN 500V
N - CHANNEL ENHANCEMENT | ![]() | ![]() |
| APT50M75JLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT50M75JLL
500V 52A 0.075 W
S G D S
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addr | ![]() | ![]() |
| APT5017SLC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. | ![]() | ![]() |
| APT50GT60BRDQ2 | Thunderbolt IGBT | ![]() | ![]() |
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| P/N | Descripción | Fabr. | |
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| APTJC120AM25VCT1AG | SiC Power Module APTJC120AM25VCT1AG
Phase leg SiC Power Module
VDSX = 1200V RDSon = 25 mΩ max @ Tj = 25 °C ID = 50 A @ Tc = 50 °C
Application
Welding converters Switched Mode Power Supplies Uninterruptible Po | ![]() | |
| APTJC120AM13VCT1AG | SiC Power Module | ![]() | |
| APTM100AM90FG | MOSFET Power Module | ![]() |
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| P/N | Descripción | Fabr. | |
| 2SC1815 | Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. |
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