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APT5012 Datasheet PDF

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Microchip APT5012JN
Power Field-Effect Transistor, 43A I(D), 1-Element, Metal-oxide Semiconductor FET


PDF APT5012 MOSFET ( Hoja de datos )

P/N Descripción Fabr. PDF
APT5012 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT5012WVR 500V 40A 0.120Ω POWER MOS V ® TO-267 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. V® Faster Switching Lower Leakage 100% Avalanche Tested New TO-2
Advanced Power Technologydatasheet APT5012 pdf
APT5012 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Advanced Power Technologydatasheet APT5012 pdf


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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

datasheet APT5012 download

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APT50GF60JU2Boost chopper NPT IGBT

APT50GF60JU2 ISOTOP® Boost chopper NPT IGBT K VCES = 600V IC = 50A @ Tc = 90°C C Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch Featur
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APT5024SFLLPower MOS 7 FREDFET

APT5024BFLL APT5024SFLL 500V 22A 0.240Ω POWER MOS 7 R FREDFET BFLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and swit
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APT50M75B2FLLPower MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

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APT5017BLCPower MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

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APTJC120AM25VCT1AG Phase leg SiC Power Module VDSX = 1200V RDSon = 25 mΩ max @ Tj = 25 °C ID = 50 A @ Tc = 50 °C Application Welding converters Switched Mode Power Supplies Uninterruptible Po
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Esta es una página para buscar información de compra e inventario para APT5012. Para productos compatibles y de reemplazo con APT5012, descargue la hoja de datos para obtener más detalles.

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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

SEMTECH
Semtech
datasheet 2SC1815 pdf


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