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APT5010JLL Datasheet PDF |
PDF APT5010JLL MOSFET ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| APT5010JLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
APT5010JLL
500V 44A 0.100 W
S G D S
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patent
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APT5010JLL PDF Descargar
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Electronic components |
| P/N | Descripción | Fabr. | |
| APT5010JVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT5010JVFR
500V 44A 0.100Ω
S G D S
POWER MOS V ®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effec | | |
| APT5010JLC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. APT5010JLC
500V 44A 0.100 W
S G D S
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optim | | |
| APT5010JLLU2 | ISOTOP Boost chopper MOSFET Power Module |  | |
| APT5010JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | | |
Componentes electrónicos recomendados |
| P/N | Descripción | Fabr. | |
| APT1608SECK | 1.6 x 0.8 mm SMD Chip LED Lamp Low power consumption, Wide viewing angle, Ideal for backlight and indicator |  | |
| APTJC120AM25VCT1AG | SiC Power Module APTJC120AM25VCT1AG
Phase leg SiC Power Module
VDSX = 1200V RDSon = 25 mΩ max @ Tj = 25 °C ID = 50 A @ Tc = 50 °C
Application
Welding converters Switched Mode Power Supplies Uninterruptible Po |  | |
| APTJC120AM13VCT1AG | SiC Power Module | | |
| APTM100AM90FG | MOSFET Power Module | | |
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