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APT5010B2VR Datasheet PDF |
PDF APT5010B2VR MOSFET ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| APT5010B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5010B2VR
500V 47A 0.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
Faster Switching Lower Leakage
100% Avalanche Tested New T-M
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Electronic components |
| P/N | Descripción | Fabr. | |
| APT5010B2FLL | Power MOS 7 FREDFET APT5010B2FLL APT5010LFLL
500V 46A 0.100Ω
POWER MOS 7 R FREDFET
B2FLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and sw | ![]() | ![]() |
| APT5010B2LC | high voltage N-Channel enhancement mode power MOSFET APT5010B2LC APT5010LLC
500V 47A 0.100W
POWER MOS VITM
B2LC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is
T-MAX� | ![]() | ![]() |
| APT5010B2LL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. | ![]() | ![]() |
| APT5010B2 | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. | ![]() | ![]() |
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| P/N | Descripción | Fabr. | |
| APT1608SECK | 1.6 x 0.8 mm SMD Chip LED Lamp Low power consumption, Wide viewing angle, Ideal for backlight and indicator | ![]() | |
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Phase leg SiC Power Module
VDSX = 1200V RDSon = 25 mΩ max @ Tj = 25 °C ID = 50 A @ Tc = 50 °C
Application
Welding converters Switched Mode Power Supplies Uninterruptible Po | ![]() | |
| APTJC120AM13VCT1AG | SiC Power Module | ![]() | |
| APTM100AM90FG | MOSFET Power Module | ![]() |
| Esta es una página para buscar información de compra e inventario para APT5010B2VR. Para productos compatibles y de reemplazo con APT5010B2VR, descargue la hoja de datos para obtener más detalles. |
| P/N | Descripción | Fabr. | |
| 2SC1815 | Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. |
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