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APM2317 Datasheet PDF |
PDF APM2317 MOSFET ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| APM2317 | P-Channel Enhancement Mode MOSFET
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
APM2317
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-20V, -4.5A ,
RDS(ON)=28mΩ (typ.) @ VGS=-4.5V RDS(ON)=38mΩ (typ.) @ VGS=-2.5V RDS(ON)=55mΩ (typ.) @ VGS=-1.8V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
S
Applications
Power Management in Notebook Computer
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Electronic components |
| P/N | Descripción | Fabr. | |
| APM2303A | P-Channel Enhancement Mode MOSFET APM2303A
®
P-Channel Enhancement Mode MOSFET
Features
Pin Description
· -30V, -4A,
RDS(ON)=55mW (max.) @ VGS=-10V RDS(ON)=70mW (max.) @ VGS=-4.5V RDS(ON)=115mW (max.) @ VGS=-2.5V
· Reliable and | ![]() | ![]() |
| APM2317AT | P-Channel Enhancement Mode MOSFET APM2317A, APM2317AT
®
P-Channel Enhancement Mode MOSFET
Features
· -20V, -4.5A ,
RDS(ON)=28mW (typ.) @ VGS=-4.5V RDS(ON)=38mW (typ.) @ VGS=-2.5V RDS(ON)=55mW (typ.) @ VGS=-1.8V
· Reliable and Ru | ![]() | ![]() |
| APM2304A | N-Channel Enhancement Mode MOSFET | ![]() | ![]() |
| APM2321 | P-Channel Enhancement Mode MOSFET | ![]() | ![]() |
Componentes electrónicos recomendados |
| P/N | Descripción | Fabr. | |
| APM4015P | P-Channel MOSFET ( -40V / -45A ) Super High Dense Cell Design / Reliable and Rugged / Power Management in LCDTV Inverter | ![]() | |
| APM4010 | 40V / 57A / N-Channel MOSFET N-Channel Enhancement Mode MOSFET. RDS(ON)=8.2mW (typ.) @VGS=10V, RDS(ON)=13mW (typ.) @VGS=5V, Super HighDense CellDesign , Reliable and Rugged, Power Management in LCD monitor/TV inverter | ![]() | |
| APM4010N | 40V / 54A / N-Channel MOSFET | ![]() | |
| APM4546 | Dual Enhancement Mode MOSFET | ![]() |
| Esta es una página para buscar información de compra e inventario para APM2317. Para productos compatibles y de reemplazo con APM2317, descargue la hoja de datos para obtener más detalles. |
| P/N | Descripción | Fabr. | |
| 2SC1815 | Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. |
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