AP4413M Datasheet PDF

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VBsemi AP4413M-VB

P, -20V, -8A, Rds(on), 16M¦¸@4.5V, 19.2M¦¸@2.5V, 15VGS(¡ÀV), -0.6~-2VTH(V) , SOP8 Mosfet, Led

PDF AP4413M MOSFET ( Hoja de datos )

P/N	Descripción	Fabr.	PDF
AP4413M	ENHANCEMENT MODE POWER MOSFET AP4413M Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G -20V 30mΩ -7.8A ID SO-8 S S S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-e

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ENHANCEMENT MODE POWER MOSFET

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Electronic components

P/N	Descripción	Fabr.	PDF
AP4415GH	35V, 24A, P-Channel POWER MOSFET • Simple Drive Requirement • Low On-resistance • Fast Switching Characteristic, -35V 36mΩ -24A.
AP4418GJ	ENHANCEMENT MODE POWER MOSFET AP4418GH, J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 35V 20mΩ 33A ▼ Simple Drive Requirement
AP4410AGM-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4412M	ENHANCEMENT MODE POWER MOSFET

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P/N	Descripción	Fabr.	PDF
AP4543GEH-HF	N AND P-CHANNEL MODE POWER MOSFET Simple Drive Requirement, Good Thermal Performance, Fast Switching Performance
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nuevas actualizaciones

P/N	Descripción	Fabr.	PDF
2SC1815	Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.	Semtech

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