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AOD4100 Datasheet PDF

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VBsemi AOD4100-VB
N, 30V, 60A, Rds(on), 10M¦¸@10V, 11M¦¸@4.5V, 20VGS(¡ÀV), 1.6VTH(V) , TO252


PDF AOD4100 Transistor ( Hoja de datos )

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AOD4100 N-Channel Enhancement Mode Field Effect Transistor

AOD4100 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.5m Ω (VGS =
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N-Channel Enhancement Mode Field Effect Transistor

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AOD4124100V N-Channel MOSFET

AOD4124 100V N-Channel MOSFET General Description The AOD4124 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding e
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AOD413YP-Channel Enhancement Mode Field Effect Transistor

AOD413Y P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With
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AOD41830V N-Channel MOSFET

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AOD4189P-Channel Enhancement Mode Field Effect Transistor

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AOD7B65M3 650V, 7A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 650V breakdown voltage Very fast and soft recovery freewh
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AOD5B65N1 650V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 650V breakdown voltage Very low turn-off switching loss
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2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

 SEMTECH
Semtech		 datasheet 2SC1815 pdf


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