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AOB403 Datasheet PDF

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VBsemi AOB403-VB
P¡ªchannel, -60V, -80A, Rds(on), 21M¦¸@10V, 25M¦¸@4.5V, 20VGS(¡ÀV), -2.1VTH(V) , TO263


PDF AOB403 Transistor ( Hoja de datos )

P/N Descripción Fabr. PDF
AOB403 P-Channel Enhancement Mode Field Effect Transistor

AOB403 P-Channel Enhancement Mode Field Effect Transistor General Description The AOB403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2-PAK package, this device is well suited for high current load applications. Standard product AOB403 is Pb-free (meets ROHS & Sony 259 specifications). AOB403L
Alpha & Omega Semiconductorsdatasheet AOB403 pdf
AOB403 P-Channel Enhancement Mode Field Effect Transistor
Alpha & Omega Semiconductorsdatasheet AOB403 pdf


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P-Channel Enhancement Mode Field Effect Transistor

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Electronic components

P/N Descripción Fabr. PDF
AOB470LN-Channel MOSFET

AOT470, AOB470L 75V N-Channel MOSFET General Description Product Summary The AOT470, AOB470L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This devic
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AOB414N-Channel Enhancement Mode Field Effect Transistor

Rev 2: Nov. 2004 AOB414, AOB414L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOB414 uses advanced trench technology to provide excellent RDS(ON), shoo
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AOB434N-Channel Enhancement Mode Field Effect Transistor

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AOB420N-Channel Enhancement Mode Field Effect Transistor

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P/NDescripciónFabr.PDF
AOB20B65M1IGBT, Insulated Gate Bipolar Transistor

AOK20B65M1, AOT20B65M1, AOB20B65M1 650V, 20A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 650V breakdown voltage Very fa
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AOB5B60DIGBT, Insulated Gate Bipolar Transistor

AOB5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust sho
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AOB5B65M1IGBT, Insulated Gate Bipolar Transistor

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AOB470LN-Channel MOSFET

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2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

SEMTECH
Semtech
datasheet 2SC1815 pdf


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