AM2300 Datasheet PDF

AM2300 N-Channel Enhancement Mode MOSFET Features 20V, 6A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=115mΩ(typ.) @ VGS=2.5V Pin Description D Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package G S Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Top View of SOT-2

Analog Power AM2313P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this

Analog Power N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal

Manufactured on 0.23 μm process technology, Ultra low power consumption (typical values at 5 MHz)

Manufactured on 0.35 μm process technology, Ultra low power consumption