3N166 Datasheet PDF

Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 , 3N166 FEATURES CORPORATION Very High Impedance High Gate Breakdown Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N16

3N166 P-CHANNEL MOSFET The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature 65°C to +200°C for high reliability and harsh environment applications. Operating Junction Temperature 55°C

MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current @Total Device Dissipation T, ^ = 25°C Derate above 25°C Operating and Storage Junction Temperature Ra

3N155 3N156 CASE 20-03, STYLE 2 TO-72 (TO-206AF) MOSFET SWITCHING P-CHANNEL ENHANCEMENT Refer to 3N157 for graphs. MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage

3N155 3N156 CASE 20-03, STYLE 2 TO-72 (TO-206AF) MOSFET SWITCHING P-CHANNEL ENHANCEMENT Refer to 3N157 for graphs. MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage