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PDF 3LP01N Datasheet ( Hoja de datos ) |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3LP01N | P-Channel Silicon MOSFET
Ordering number : ENN6646
3LP01N
P-Channel Silicon MOSFET
3LP01N
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2178
5.0 4.0
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
[3LP01N]
4.0
0.45 0.5
0.6 2.0
5.0
0.45
0.44
1
2
3
14.0
1 : Source 2 : Drain 3 : Gate
1.3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Sourc
|  Sanyo Semicon Device | mosfet |
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Electronic components |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | 3LP01N | P-Channel Silicon MOSFET [ Sanyo Semicon Device ] | |  |
| 2 | 3LP01SS | P-Channel Silicon MOSFET [ Sanyo Semicon Device ] | | |
| 3 | 3LP01S | P-Channel Small Signal MOSFET [ ON Semiconductor ] |  | |
| 4 | 3LP01S | P-Channel Silicon MOSFET [ Sanyo Semicon Device ] | | |
Рекомендуемые электронные компоненты |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | 3LP01C | Ultrahigh-Speed Switching Applications Ordering number : ENN6645
3LP01C
P-Channel Silicon MOSFET
3LP01C
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2091A
[3LP01C]
0.5
Low ON-resistance. Ultrahigh-sp | Sanyo Semicon Device | |
| 2 | 3LP01M | P-Channel Silicon MOSFET
Ordering number : ENN6139
3LP01M
P-Channel Silicon MOSFET
3LP01M
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2158
[3LP01M]
0.425
0.3
Low ON-resistance. Ultra | Sanyo Semicon Device | |
| 3 | 3LP01N | P-Channel Silicon MOSFET | Sanyo Semicon Device | |
| 4 | 3LP01S | P-Channel Small Signal MOSFET | ON Semiconductor | |
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| 2SC1815 | Кремниевый эпитаксиальный планарный транзистор NPN для коммутации и усилителей частоты. Транзистор подразделяется на четыре группы: O, Y, G и L, в зависимости от его коэффициента усиления по постоянному току. В качестве дополнительного типа рекомендуется PNP-транзистор ST 2SA1015. |
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