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30KP58SCA Datasheet PDF



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P/N Descripción Fabr. PDF
30KP58SCA Glass passivated junction chip

30KP33S,SC SERIES 30K Watts TVS Diodes VR : 33 - 400 Volts PPK : 30,000 Watts Features Glass passivated junction chip Excellent Clamping Capability Fast Response Time Low Leakage Current Pb , RoHS Free DO-204AR 0.251 (6.40) 0.244 (6.20) 1.00 (25.4) MIN. Mechanical Data Case : molded plastic Epoxy : UL94V-O rate flame retardant Lead : Axial lead solderable per MIL-STD-202, Method
 		LGEdatasheet 30KP58SCA pdf


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Glass passivated junction chip

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Electronic components

P/N Descripción Fabr. PDF
30KP58SCGlass passivated junction chip

30KP33S,SC SERIES 30K Watts TVS Diodes VR : 33 - 400 Volts PPK : 30,000 Watts Features Glass passivated junction chip Excellent Clamping Capability Fast Response Time Low Leakage Current Pb ,
LGE
datasheet 30KP58SC pdf
30KP58SGlass passivated junction chip

30KP33S,SC SERIES 30K Watts TVS Diodes VR : 33 - 400 Volts PPK : 30,000 Watts Features Glass passivated junction chip Excellent Clamping Capability Fast Response Time Low Leakage Current Pb ,
LGE
datasheet 30KP58S pdf
30KP58SAGlass passivated junction chip

LGE
datasheet 30KP58SA pdf

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Typical failure mode is short from over-specified voltage or current
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30KF30EFast Recovery Diode, Rectifier,

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
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30KF30BFast Recovery Diode, Rectifier,

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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

 SEMTECH
Semtech		 datasheet 2SC1815 pdf


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