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2SC3074 Datasheet PDF |
PDF 2SC3074 Transistor ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| 2SC3074 | TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitt
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| 2SC3074 | Silicon NPN Epitaxial
| ![]() |
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Electronic components |
| P/N | Descripción | Fabr. | |
| 2SC3085 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3085
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 500V(Min) ·Fast Switching Speed ·Wide Area of Safe Opera | ![]() | |
| 2SC3094 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3094
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Opera | ![]() | |
| 2SC3059 | Silicon High Speed Power Transistor | ![]() | ![]() |
| 2SC3071 | NPN Epitaxial Planar Silicon Transistor | ![]() |
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| Esta es una página para buscar información de compra e inventario para 2SC3074. Para productos compatibles y de reemplazo con 2SC3074, descargue la hoja de datos para obtener más detalles. |
| P/N | Descripción | Fabr. | |
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