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2SC3052 Datasheet PDF |
PDF 2SC3052 Transistor ( Hoja de datos ) |
| P/N | Descripción | Fabr. | |
| 2SC3052 | LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
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| 2SC3052 | LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
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| 2SC3052 | TRANSISTOR
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SC3052
FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃)
TRANSISTOR (NPN)
SOT-23-3L
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=2
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| 2SC3052 | NPN Transistor
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| 2SC3052 | NPN Silicon Plastic-Encapsulate Transistor
2SC3052
Elektronische Bauelemente
NPN Silicon Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
3.COLLECTOR
Dim
A
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
A
L
1.BASE 2.EMITTER
3
B C
B S
2
FEATURES
n
Top View
1
D G H J K L S V
Excellent linearity of DC f
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| 2SC3094 | Silicon NPN Power Transistor INCHANGE Semiconductor
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