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2SC2899 Datasheet PDF

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Renesas 2SC2899
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon


PDF 2SC2899 Transistor ( Hoja de datos )

P/N Descripción Fabr. PDF
2SC2899 Silicon NPN Triple Diffused

2SC2899 Silicon NPN Triple Diffused Application High speed and high voltage switching Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction tempera
Hitachi Semiconductordatasheet 2SC2899 pdf
2SC2899 SILICON POWER TRANSISTOR
SavantICdatasheet 2SC2899 pdf


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Silicon NPN Triple Diffused

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Electronic components

P/N Descripción Fabr. PDF
2SC2812Silicon Epitaxial Planar Transistor

Production specification Silicon Epitaxial Planar Transistor FEATURES - High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). - High Voltage:VCEO=50V. Pb Lead-free 2SC2812 APPLICATIONS - NPN Silic
Galaxy Microelectronics
datasheet 2SC2812 pdf
2SC2855Silicon NPN Epitaxial

2SC2855, 2SC2856 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1190 and 2SA1191 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2855,
Hitachi Semiconductor
datasheet 2SC2855 pdf
2SC2810NPN SILICON POWER TRANSISTOR

SavantIC
datasheet 2SC2810 pdf
2SC2873-YNPN Silicon Epitaxial Transistors

MCC
datasheet 2SC2873-Y pdf

Componentes electrónicos recomendados

P/NDescripciónFabr.PDF
2SC276218V, 0.4A, NPN Transistor, Can type

Medium power output, Pout = 1.4 W TYP. @f = 500 MHz, Vcc = 12.6 V, Pin = 0.25 W
NECdatasheet 2SC2762 pdf
2SC5928400V / 7A / NPN Transistor

Switching Regulator Applications
Sanyodatasheet 2SC5928 pdf
2SC5586550V / 5A / NPN Power Transistor

Inchangedatasheet 2SC5586 pdf
2SC5178R-T13V / 10mA / NPN Transistor ( 84T )

Renesasdatasheet 2SC5178R-T1 pdf


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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

SEMTECH
Semtech
datasheet 2SC1815 pdf


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