2SC2881 Datasheet PDF

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Toshiba 2SC2881-Y(TE12L,ZC

Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon

PDF 2SC2881 Transistor ( Hoja de datos )

P/N	Descripción	Fabr.	PDF
2SC2881	Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm High voltage: VCEO = 120 V High transition frequency: fT = 120 MH- (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Co
2SC2881	NPN SILICON TRANSISTOR
2SC2881	Voltage Amplifier Applications SMD Type Voltage Amplifier Applications 2SC2881 Transistors Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage temperatur
2SC2881	TRANSISTOR
2SC2881	Plastic-Encapsulate Transistors SOT-89 Plastic-Encapsulate Transistors WILLAS 2SC2881 TRANSISTOR (NPN) FEATURES - Small Flat Package - High Transition Frequency - High Voltage - Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” SOT-89 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS - Power Amplifier and Voltage Amplifier Symbol VCBO VCEO VEBO IC PC

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Silicon NPN Epitaxial Type TRANSISTOR

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Electronic components

P/N	Descripción	Fabr.	PDF
2SC2812	Silicon Epitaxial Planar Transistor Production specification Silicon Epitaxial Planar Transistor FEATURES - High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). - High Voltage:VCEO=50V. Pb Lead-free 2SC2812 APPLICATIONS - NPN Silic
2SC2881-Y	NPN Silicon Power Transistors MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2881-O 2SC2881-Y Features Lead Free Finish, RoHS Compliant ("P" Suffix des
2SC2832A	SILICON POWER TRANSISTOR
2SC2898	Silicon NPN Triple Diffused

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P/N	Descripción	Fabr.	PDF
2SC2762	18V, 0.4A, NPN Transistor, Can type Medium power output, Pout = 1.4 W TYP. @f = 500 MHz, Vcc = 12.6 V, Pin = 0.25 W
2SC5928	400V / 7A / NPN Transistor Switching Regulator Applications
2SC5586	550V / 5A / NPN Power Transistor
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Esta es una página para buscar información de compra e inventario para 2SC2881. Para productos compatibles y de reemplazo con 2SC2881, descargue la hoja de datos para obtener más detalles.

nuevas actualizaciones

P/N	Descripción	Fabr.	PDF
2SC1815	Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia. El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.	Semtech

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