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2N6053 Buy Now and Stock |
PDF 2N6053 Datasheet ( Hoja de datos ) |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N6053 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
| ![]() Central Semiconductor | transistor |
2 | 2N6053 | POWER TRANSISTORS(8A/100W)
| ![]() Mospec Semiconductor | transistor |
3 | 2N6053 | (2N6053 / 2N6054) Silicon Power Transistor
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2)
PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N6053 2N6054
Fig.1 simplified outline (TO-3) and sym
| ![]() SavantIC | transistor |
4 | 2N6053 | Bipolar PNP Device
| ![]() Seme LAB | data |
5 | 2N6053 | POWER COMPLEMENTARY Silicon TRANSISTORS
PNP 2N6053 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6055. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCBO VCEO VEBO IC ICM IB PT TJ Ts Collector-Base V
| ![]() Comset Semiconductors | transistor |
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Electronic components |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2N6051 | POWER TRANSISTORS(12A/150W) [ Mospec Semiconductor ] | ![]() | ![]() |
2 | 2N6051 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS [ Boca Semiconductor Corporation ] | ![]() | ![]() |
3 | 2N6052 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS [ ON Semiconductor ] | ![]() | ![]() |
4 | 2N6052 | POWER TRANSISTORS(12A/150W) [ Mospec Semiconductor ] | ![]() | ![]() |
Рекомендуемые электронные компоненты |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2N6050 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series | ![]() Central Semiconductor | ![]() |
2 | 2N6050 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2N6050
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain ·Complement to type 2N6057 ·100% avalanche te | ![]() Inchange Semiconductor | ![]() |
3 | 2N6050 | POWER TRANSISTORS(12A/150W) | ![]() Mospec Semiconductor | ![]() |
4 | 2N6050 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS | ![]() Boca Semiconductor Corporation | ![]() |
Esta es una página para buscar información de compra e inventario para 2N6053. Para productos compatibles y de reemplazo con 2N6053, descargue la hoja de datos para obtener más detalles. |
Número de pieza | Descripción | Fabricantes | |
2SC1815 | Кремниевый эпитаксиальный планарный транзистор NPN для коммутации и усилителей частоты. Транзистор подразделяется на четыре группы: O, Y, G и L, в зависимости от его коэффициента усиления по постоянному току. В качестве дополнительного типа рекомендуется PNP-транзистор ST 2SA1015. |
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