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P/N Descripción Fabr. Tag
2N6050 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 C
Central Semiconductortransistor
2N6050 Silicon PNP Power Transistors
Inchange Semiconductortransistor
2N6050 POWER TRANSISTORS(12A/150W)

A A A A
Mospec Semiconductortransistor
2N6050 DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS
Boca Semiconductor Corporationtransistor
2N6050 Bipolar PNP Device

2N6050 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0
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COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS


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Electronic components

P/N Descripción Fabr. PDF
2N6051POWER TRANSISTORS(12A/150W)

[ Mospec Semiconductor ]
Mospec Semiconductor
datasheet 2N6051 pdf
2N6051DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

[ Boca Semiconductor Corporation ]
Boca Semiconductor Corporation
datasheet 2N6051 pdf
2N6052DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

[ ON Semiconductor ]
ON Semiconductor
datasheet 2N6052 pdf
2N6052POWER TRANSISTORS(12A/150W)

[ Mospec Semiconductor ]
Mospec Semiconductor
datasheet 2N6052 pdf

Componentes electrónicos recomendados

P/NDescripciónFabr.PDF
2N6050COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series
Central Semiconductordatasheet 2N6050 pdf
2N6050Silicon PNP Power Transistors

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain ·Complement to type 2N6057 ·100% avalanche te
Inchange Semiconductordatasheet 2N6050 pdf
2N6050POWER TRANSISTORS(12A/150W)

Mospec Semiconductordatasheet 2N6050 pdf
2N6050DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

Boca Semiconductor Corporationdatasheet 2N6050 pdf


Esta es una página para buscar información de compra e inventario para 2N6050. Para productos compatibles y de reemplazo con 2N6050, descargue la hoja de datos para obtener más detalles.

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P/N Descripción Fabr. PDF
2SC1815

Transistor NPN planar epitaxial de silicio para conmutación y amplificadores de frecuencia.
El transistor se divide en cuatro grupos: O, Y, G y L, dependiendo de su ganancia de CC. Se recomienda el transistor PNP ST 2SA1015 como tipo adicional.

SEMTECH
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