Datasheet STW21N65M5 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	STW21N65M5	N-CHANNEL MOSFET STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247 Features Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N	STMicroelectronics	mosfet

STW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	STW-195	Retaining Ring Spec Sheet www.americanringmfg.com STW-195 Retaining Ring Spec Sheet Part Number: STW-195 STW - External JIS B 2804 Retaining Rings Ring Specs (D) Free Diameter: (t) Thickness: (b) Radial Wall: Groove Specs: (B) Application Diameter: (G) Groove Diameter: (W) Groove Width: Groove Depth: Other Specs Approximate	AmericanRing	data
2	STW10NA50	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH10NA50 STH10NA50FI STW10NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω ID 9.6 A 5.6 A 9.6 A TO-247 TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN	ST Microelectronics	transistor
3	STW10NB60	N-CHANNEL Power MOSFET ® STW10NB60 N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH™ MOSFET TYPE ST W10NB60 s s s s s V DSS 600 V R DS(on) < 0.8 Ω ID 10 A TYPICAL RDS(on) = 0.69 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 DESCRIPTION	ST Microelectronics	mosfet
4	STW10NC60	N-CHANNEL Power MOSFET N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN	ST Microelectronics	mosfet
5	STW10NC70Z	N-CHANNEL Power MOSFET N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW10NC70Z s s STW10NC70Z VDSS 700 V RDS(on) < 0.75 Ω ID 10.6 A s s s TYPICAL RDS(on) = 0.58 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANC	ST Microelectronics	mosfet
6	STW10NK60Z	N-channel Power MOSFET	ST Microelectronics	mosfet
7	STW10NK80Z	N-CHANNEL Power MOSFET STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet — production data Features TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) <0.90Ω <0.90Ω <0.90Ω ID 9A 9A	ST Microelectronics	mosfet
8	STW11NB80	N-CHANNEL PowerMESH MOSFET ® STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE STW 11NB80 s s s s s s V DSS 800 V R DS(on) < 0.8 Ω ID 11 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRIN	ST Microelectronics	mosfet
9	STW11NK100Z	N-CHANNEL Power MOSFET STW11NK100Z STW11NK100Z N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features Type VDSS (@Tjmax) RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ V	ST Microelectronics	mosfet

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Número de pieza	Descripción	Fabricantes	PDF
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