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PDF CPH5605 Data sheet ( Hoja de datos )
| Número de pieza | CPH5605 | |
| Descripción | Ultrahigh-Speed Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number:ENN6441
N-Channel and P-Channel Silicon MOSFETs
CPH5605
Ultrahigh-Speed Switching Applications
Features
· The CPH5605 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON
resistance and high-speed switching, thereby en-
abling high-density mounting.
· 2.5V drive.
Package Dimensions
unit:mm
2168
[CPH5605]
2.9 0.15
543
0.05
1
0.95
2
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
0.4 SANYO : CPH5
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm2×0.8mm) 1unit
Ratings
N-channel P-channel
20 –20
±10 ±10
1.4 –1
5.6 –4
0.9
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : FE
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=700mA
ID=700mA, VGS=4V
ID=400mA, VGS=2.5V
Ratings
min typ max
Unit
20 V
10 µA
±10 µA
0.4 1.3 V
1.8 2.5
S
200 260 mΩ
260 360 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2490 No.6441-1/6
1 page  
10
VDS=10V
9 ID=1.4A
8
VGS -- Qg
CPH5605
[Nch]
--10
VDS=--10V
--9 ID=--1A
--8
VGS -- Qg
[Pch]
7 --7
6 --6
5 --5
4 --4
3 --3
2 --2
1
0
01 23 45 6
Total Gate Charge, Qg – nC
IT01082
10
7 IDP=5.6A
5
3
2 ID=1.4A
ASO
[Nch]
1ms 100µs
10ms
1.0
7
5
3 Operation in
2 this area is
0.1 limited by RDS(on).
DC
100ms
operation
7
5 Ta=25°C
3 Single pulse
2 1 unit
0.01 Mounted on a ceramic board (600mm2×0.8mm)
0.1 2 3 5 7 1.0 2 3 5 7 10
23 5
Drain-to-Source Voltage, VDS – V IT01083
PD -- Ta
[Nch, Pch]
1.2
--1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Total Gate Charge, Qg – nC
IT00788
--10
7
5 IDP=--4A
3
2
ID=--1A
--1.0
7
5
3
2 Operation in
this area is
ASO
[Pch]
10ms1ms
DC
100ms
operation
100µs
--0.1 limited by RDS(on).
7
5 Ta=25°C
3 Single pulse
2 1 unit
--0.01 Mounted on a ceramic board (600mm2×0.8mm)
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Drain-to-Source Voltage, VDS – V IT00790
1.0
0.9
0.8
0.6
0.4
0.2
Mounted on a ceramic board (600mm 2×0.8mm) 1 unit
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C IT01084
No.6441-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CPH5605.PDF ] | |
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