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PDF 2SD1767 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1767 | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SD1767
0.7A , 80V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Breakdown Voltage and Current
Excellent DC Current Gain Linearity
Complementary to 2SB1189
CLASSIFICATION OF hFE
Product-Rank 2SD1767-P
Range
82~180
Marking
DCP
2SD1767-Q
120~270
DCQ
2SD1767-R
180~390
DCR
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
1
Base
SOT-89
4
A
1
B
2
C
3
E
EC
Collector
2
3
Emitter
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40
3.94
1.40
4.60
4.25
1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
80
Emitter-Base Voltage
VEBO
5
Collector Current-Continuous
IC
700
Collector Power Dissipation
PC 500
Maximum Junction to Ambient
RθJA
250
Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Collector-Base Breakdown Voltage
V(BR)CBO
80
-
- V IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
80
-
- V IC=2mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)EBO
ICBO
IEBO
5
-
--
- - V IE=50µA, IC=0
- 0.5 µA VCB=50V, IE=0
- 0.5 µA VEB=4V, IC=0
DC Current Gain
hFE 82 - 390
VCE=3V, IC= 100mA
Collector-Emitter Saturation voltage
VCE(sat)
-
- 0.4 V IC=500mA, IB= 50mA
Transition Frequency
Collector Output Capacitance
fT - 120 - MHz VCE=10V,IC=50mA,f=100MH
COB - 10 - pF Vz CB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
10-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
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