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PDF 2SD1766 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1766 | |
| Descripción | Plastic-Encapsulate Transistors | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD1766 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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WILLAS
FM120-M+
2SD1766 THRU
SOT1-.80A9SPURlaFAsCtEicM-OEUNnTcSaCpHOsTuTKlaYtBeARTRrIEaRnRsEiCsTtIFoIErRsS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
TRANSIST•OBRatc(hNpProNc)ess design, excellent power dissipation offers
FEATURESbetter reverse leakage current and thermal resistance.
z Lo•wLoVopwtCimEp(irszoaeft)ibl.eVosaCurEdr(fsasapct)e=ac0me.o.1u6nVte(dTayppp.)li(cIaCt/iIoBn=i2nAor/0de.2r Ato)
z Pb•-FLorweepopwaercloksasg, heigihseaffivciaeinlcayb. le
• High current capability, low forward voltage drop.
Ro•HHSighpsruordgeuccatpfaobrilpitya. cking code suffix ”G”
Ha•loGguearndrfinregeforporvoedrvuoclttagfoerprpoateccktiionng. code suffix “H”
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MAXIMUM RMIALT-SINTDG-1S95(T00a=/22258℃ unless otherwise noted)
Symbol • RoHS produPctafroarmpaectkeinrg code suffix "G" Value
Halogen free product for packing code suffix "H"
Unit
VCBO
MCeollcechtoar-nBiacseal Vdoaltatgae
40 V
VCEO
VEBO
IC
PC
• CEoplolexcyto: Ur-EL9m4i-ttVe0r rVaoteltadgfleame retardant 32
V
• ECmasitete:rM-BoalsdeedVpollatasgtiec, SOD-123H
5
V
•
CTeorllmecintoarlsC:Purlaretendt
-tCeromnitninaulso,ussolderable
p2er
,
MIL-STDA-750
Method 2026
• CPoolllaercittoy r: dInisdsicipaatetidonby cathode band 500
mW
TJ • JMuonucntiotinngTPemospiteiorantu: Areny
150 ℃
Tstg
• SWtoeriagghet :TAepmpproexriamtuarteed 0.011 gram -55-150
℃
Package outline
SOT-89
1. BASE
SOD-123H
0.146(3.7)
0.130(3.3)
2. COLLECTOR
3. EMITTER
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
ELECTRICAL CHMAARXAIMCUTMERRIASTTIINCGSS(TAaN=D25E℃LEuCnTleRsIsCAoLthCeHrwAiRsAeCsTpEeRcIiSfiTedIC)S
Ratings at 25℃ ambient temperature unless otherwise specified.
SFoinrgcleappaPhcaaitsriveaemhlaoelaftdew,radveer,a6te0Hcuzr,rreenstisbtyiv2e0o%f induScytivmeblooald.
Test conditions
Min Typ Max Unit
Collector-base breakdRoAwTnINvGoSltage
V(BR)CSBYOMBOILC=FM5102μ0A-M,HIEF=M0130-MH FM140-MH FM150-MH FM1640-0MH FM180-MH FM1100-MH FM115V0-MH FM1200-MH
Marking Code
12 13 14 15 16
18 10
115 120
CollMeacxtiomru-memReitctuerrrebnrt ePaekakdRoewvnersveoVltoaltgagee
V(BR)CVEORRM IC=1m20A, IB=030
40 50
6032 80
100
15V0 200
Maximum RMS Voltage
EmiMttaexrim-buamsDeCbBreloackkidngowVonltavgoeltage
VRMS
14
21
28
35
42
56 70
105 140
V(BR)EBVODC IE=502μ0A, IC=030 40 50 60 5 80 100 15V0 200
CollMeacxtiomrumcuAtv-oerfafgceuFrorrewnatrd Rectified Current
ICBO IO VCB=20V, IE=0
EmiPteteakr Fcourwt-aordffScurugrerCeunrtrent 8.3 ms single half sine-wavIeEBO IFSM VEB=4V, IC=0
superimposed on rated load (JEDEC method)
DC TcyupricraelnTthgeraminal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
hFE(1R) ΘJA VCE=3V, IC=50 0mA
CJ
CollOepcetroarti-negmTeitmteprersaatutruerRaatniogne voltage
VCE(sat)TJ IC=2A, IB=0-5.52Ato +125
1.0
30
8420
120
1
1
390
-55 to +01.580
μA
μA
V
Storage Temperature Range
Tr ansition frequency
TSTG
fT VCE=5V, IC=50mA, f=100MHz
- 65 to +175
100
MHz
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ColMleacxtiomrumouFtoprwuatrdcaVpoaltacgietaant c1e.0A DC
Cob VF VCB=10V, IE=0, f=01.M50Hz
0.70
300.85
0.p9F
0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
C LASSIFICATION OF hFE(1)
NOTES:
@T A=125℃
IR
0.5
10
Ra1n-kMeasured at 1 MHZ and applied reverse voltagePof 4.0 VDC.
Q
R
2- Thermal Resistance From Junction to Ambient
R ange
82-180
120-270
180-390
Marking
DBP
DBQ
DBR
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD1766.PDF ] | |
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