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PDF 2SD1271A Data sheet ( Hoja de datos )
| Número de pieza | 2SD1271A | |
| Descripción | NPN Plastic-Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SD1271A
7A , 150V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
Low Collector to Emitter Saturation Voltage VCE(sat)
Satisfactory Linearity of Forward Current Transfer Ratio hFE
Large Collector Current
CLASSIFICATION OF hFE
Product-Rank 2SD1271A-R
Range
60~120
2SD1271A-Q
90~180
2SD1271A-P
130~260
ITO-220J
BN
D
E
MA
H JC
K
LL
G
F
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
14.80 15.60
9.50 10.50
13.00 REF.
4.30 4.70
2.50 3.20
2.40 2.90
0.30 0.75
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
3.00 4.00
0.90 1.50
0.50 0.90
2.34 2.74
2.50 2.90
φ 3.5 REF.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
150
100
7
7
2
62.5
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
150
-
-
V IC=0.1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 100
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
7
-
-
V IE=0.1mA, IC=0
Collector Cut – Off Current
ICBO - - 10 µA VCB=100V, IE=0
Emitter Cut – Off Current
IEBO - - 50 µA VEB=5V, IC=0
DC Current Gain
45 -
-
hFE
60 - 260
VCE=2V, IC=0.1A
VCE=2V, IC=3A
Collector-emitter saturation voltage
VCE(sat)
-
- 0.5 V IC=5A, IB=250mA
Base to Emitter Saturation Voltage
VBE(sat)
-
- 1.5 V IC=5A, IB=250mA
Transition Frequency
fT - 30 - MHz VCE=10V, IC=500mA, f =10MHz
http://www.SeCoSGmbH.com/
08-Nov-2012 Rev. A
Any changes of specification will not be informed individually.
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