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PDF BAT54W Data sheet ( Hoja de datos )

Número de pieza BAT54W
Descripción SURFACE MOUNT SCHOTTKY BARRIER DIODE
Fabricantes RECTRON 
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No Preview Available ! BAT54W Hoja de datos, Descripción, Manual

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-323 SURFACE MOUNT SCHOTTKY
BARRIER DIODE
BAT54W
FEATURES
* Low forward voltage drop
* Fast switching
* Uitra - small surface mount package
* PN Junction guard ring for transient and ESD protection
Marking: KL5
SOT-323
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.006 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Peak repetitive reverse voltage
SYMBOL
VRRM
working peak reverse voltage
VRWM
DC blocking voltage
VR
Forward contiunous current (Note 1)
IF
Repetitive peak forward current (Note 1)
IFRM
Forward surge current (Note 1)
@ t < 1.0 s
Power dissipation (Note 1)
Thermal resistance, Junction to ambient air (Note 1)
IFSM
PD
RθJA
Operating and storage temperature range
Tj, Tstg
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Reveres breakdown voltage (IRS= 100µA)
SYMBOL
V(BR)R
(IF= 0.1mA)
(IF= 1mA)
Forward voltage (Note 2)
(IF= 10mA)
(IF= 30mA)
(IF= 100mA)
Reverse leakage current (VR= 25V) (Note 2)
Junction capacitance (VR= 1.0V, f= 1.0MHz)
Reveres recovery time (IF=10mA through IR=10mA to IR=1.0mA,RL=100)
VF
IR
Cj
trr
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. tp <300µs, duty cycle <2%.
DS30065 Rev. 2P-1
0.006(0.15)
0.003(0.08)
0.053(1.35)
0.045(1.15)
0.043(1.10)
0.035(0.90)
REF 0.021(0.53)
0.004(0.10)
0.000(0.00)
0.016(0.40)
0.008(0.20)
0.055(1.40)
0.047(1.20)
0.096(2.45)
0.085(2.15)
0.087(2.20)
0.079(2.00)
Dimensions in inches and (millimeters)
VALUE
30
30
30
200
300
600
200
625
-65~+125
UNITS
V
µA
µA
µA
µW
Κ/Ω
oC
MIN
TYP
MAX
UNITS
30 -
-V
- - 240
- - 320
- - 400 mV
- - 500
- - 1000
- - 2.0 µA
- - 10 PF
- - 5.0 ns
2006-3

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