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Número de pieza | SMG2304 | |
Descripción | N-Channel MosFET | |
Fabricantes | SeCoS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SMG2304 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Elektronische Bauelemente
SMG2304
2.7A, 25V,RDS(ON) 117m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
Description
The SMG2304 provides the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
L
3
S Top View
21
B
D
G
Features
CJ
* Reliable And Rugged
H
* Super High Dense Cell Design For Extremely Low RDS(ON)
Drain
K
Applications
Gate
Source
D
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.15
S 2.40 2.80
All Dimension in mm
Marking : 2304
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,3 VGS@4.5V
Continuous Drain Current,3 VGS@4.5V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
Ratings
25
±20
2.7
2.2
10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
Max.
Symbol
Rthj-a
Ratings
90
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 5
1 page Elektronische Bauelemente
SMG2304
2.7A, 25V,RDS(ON) 117m
N-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 5 of 5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SMG2304.PDF ] |
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