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PDF 2SD874 Data sheet ( Hoja de datos )

Número de pieza 2SD874
Descripción NPN Transistor
Fabricantes WILLAS 
Logotipo WILLAS Logotipo



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No Preview Available ! 2SD874 Hoja de datos, Descripción, Manual

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SD874THRU
FM1200-M+
Pb Free Product
Features
TRABNatSchISprToOceRss(dNePsiNgn), excellent power dissipation offers
FEALboeTwtUtepRrrroEefviSleerssuerlfeaackeamgoeucnutrerdenatpapnlidcathtieornmianlorredseisr
tance.
to
z opLtoimwizCe boollaercdtsopra-Ecem. itter Saturation Voltage
z•• HLoiLgwahprcgouewrreeCrnlotolcsleasp,cahtoibgirhliPtey,offliwocwieefnrocDryw.isarsdipvaolttiaogne drop.
zHiMghinsiuPrgoewcaepraTbyiliptye. Package
Package outline
SOT-89
SOD-123H
0.146(3.7)
0.130(3.3)
1. BASE
zGPuabrd-Frirnegefopr oavcekravoglteagise parvoateiclatiobnle.
Ultra high-speed switching.
SiRlicooHn Seppitraoxdiaul cptlafnoarr pcahicpk, imnegtaclosdiliecosnujfufnixctiGon.
LeHaad-lofrgeeenpafrrtesempeerot ednuvcirtofnomr epnatcalksintagndcaordes osfuffix “H”
MIL-STD-19500 /228
2. COLLECTOR
3. EMITTER
RoHS product for packing code suffix "G"
MAMHXeaIlMcoghUenaMfrneReiAcprTaoIdlNudcGt afSotr a(pTacak=in2g5codeusnulfefixs"sH"otherwise noted)
SEypmoxbyo:l UL94-V0 rated flame retPaardraanmt eter
Value
Unit
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
CVaCsBeO: MoldeCdopllleacsttoicr-,BSaOsDe-V1o2l3taHge
TVerCmEOinals
:PClaotelledctteorrm-Einmailtste, sr oVlodletaragbele
per
,
MIL-STD-750
VEBO
MEemthiottder2-B02a6se Voltage
PoIlCarity : IndCicoallteecdtobry Ccautrhreondte
Mounting Position : Any
band
PC
Weight
:
Collector Power
Approximated 0.011
Dissipation
gram
RθJA
Thermal Resistance From Junction To Ambient
300.031(0.8) Typ.
25
V
V
0.031(0.8) Typ.
5V
Dimensions in inches and (millimeters)
1A
500 mW
250 /W
Tj MAXJIMunUcMtionRTAeTmINpeGraStuAreND ELECTRICAL CHARACTER1I5S0TICS
Ratings at T25stg ambieSnttotreamgpeeTraetmurpeeurnalteusrseotherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
-55~+150
  For capacitive load, derate current by 20%
ELECTRICARLACTIHNGASRACTERISTICSSY(MTBaO=L25FM120u-MnHleFMs1s30o-MtHhFeMr1w40-iMsHeFMs1p5e0-cMHifFieMd16)0-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12 13 14 15 16
18 10
115 120
Maximum Recurrent PPeaarkaRmeevetersre Voltage
MaximuCmoRllMeSctVoorl-tabgaese breakdown voltage
Maximum DC Blocking Voltage
Collector-emitter breakdown voltage
Maximum Average Forward Rectified Current
  Emitter-base breakdown voltage
Peak FoCrwoalrldeScutrogre Ccuurtr-eontff8.c3umrsresinngtle half sine-wave
superimposed on rated load (JEDEC method)
Typical EThmeritmtealrRceusits-toafnfcecu(Nroreten2t)
Typical Junction Capacitance (Note 1)
OperatinDgCTecmuprererantutregaRiannge
Storage Temperature Range
  Collector-emitter saturation voltage
VRRMSymb2o0l
VRMSV(BR)CB1O4
VDC
20
V(BR)CEO
IO
  V(BR)EBO
IFSM ICBO
RΘJA IEBO
CJ hFE(1)
TJ hFE(2)
TSTG
VCE(sat)
T30est con4d0itions50
IC=2110µA,IE=208
30 40
IC=2mA,IB=0
35
50
IE=10µA,IC=0
VCB=20V,IE=0
VEB =4V,IC=0
VCE =10V, IC=500mA
-V55CEto=5+V12, 5IC=1A
IC=500mA,IB=50mA
60 Min80
42 30 56
60 80
25
1.0
 5
30
Typ 100 Max 150 Unit 200
70 105 V 140
100 150 200
V
V 
0.1 µA
40
120 85
  50
- 65 to +175
  0.1
  340
-55 to +150
0.4
µA
V
Volts
Volts
Volts
Amps
Amps
℃/W
PF
Base-emitCteHrAsRaAtCuTrEaRtiIoSnTICvSoltage
SYMBOVLBFEM(s1a2t)0-MH FICM=13500-M0HmFAM,1IB4=0-5M0HmFMA150-MH FM160-MH FM180-MH FM1100-MH1.F2M1150-MHVFM1200-MH UNIT
MaximuTmraFnorswiatirod nVoflrtaegqeuaetn1c.0yA DC
MaximuCmoAllveecratgoerRoeuvteprsuetCcuarrpeanct aittan@cTeA=25℃
Rated DC Blocking Voltage
@T A=125℃
VF fT
IR Cob
VCE=100V.5,0IC=50mA, f=200.07M0 Hz
VCB=10V, IE=0, f=1MHz
0.5
10
02.8050
0.9 MHz 0.92
 
20 pF
Volts
mAmps
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- TherCmaLl RAeSsisStaInFceICFrAomTIJOunNctioOn tFo AhmFbEie(1n) t
 
  RANK
QRS
RANGE
85170
120240
170340
MARKING
ZQ ZR ZS
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.

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