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PDF 2SD874 Data sheet ( Hoja de datos )
| Número de pieza | 2SD874 | |
| Descripción | NPN Transistor | |
| Fabricantes | Jin Yu Semiconductor | |
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TRANSISTOR (NPN)
FEATURES
z Low Collector-Emitter Saturation Voltage
z Large Collector Power Dissipation
z Mini Power Type Package
2SD874
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC=10µA,IE=0
IC=2mA,IB=0
IE=10µA,IC=0
VCB=20V,IE=0
VEB=4V,IC=0
VCE=10V, IC=500mA
VCE=5V, IC=1A
IC=500mA,IB=50mA
IC=500mA,IB=50mA
VCE=10V,IC=50mA, f=200MHz
VCB=10V, IE=0, f=1MHz
Min
30
25
5
85
50
Typ
200
Max
0.1
0.1
340
0.4
1.2
20
CLASSIFICATION OF hFE（1）
RANK
RANGE
MARKING
Q
85–170
ZQ
R
120–240
ZR
S
170–340
ZS
Unit
V
V
V
µA
µA
V
V
MHz
pF
JinYu
semiconductor
www.htsemi.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD874.PDF ] | |
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