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PDF MUR1060CTD Data sheet ( Hoja de datos )
| Número de pieza | MUR1060CTD | |
| Descripción | 10.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifiers | |
| Fabricantes | Thinki Semiconductor | |
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MUR1020CTR thru MUR1060CTR
®
MUR1020CTR thru MUR1060CTR
Pb
Pb Free Plating Product
10.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Positive
Common Cathode
Suffix "CT"
Negative
Doubler
Common Anode Tandem Polarity
Suffix "CTR" Suffix "CTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
MUR1020CT
SYMBOL MUR1020CTR
MUR1020CTD
VRRM
200
VRMS
140
MUR1040CT
MUR1040CTR
MUR1040CTD
400
280
MUR1060CT
MUR1060CTR UNIT
MUR1060CTD
600 V
420 V
Maximum DC Blocking Voltage
VDC 200
400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
10.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
100 A
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
R JC
TJ, TSTG
0.98
1.3
10.0
250
35
65
2.2
-55 to +150
1.7 V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MUR1060CTD.PDF ] | |
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