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PDF BFQ67 Data sheet ( Hoja de datos )
| Número de pieza | BFQ67 | |
| Descripción | Silicon NPN wideband transistor | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Product specification
BFQ67
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
alfpage
3
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
1
Top view
2
MSB003
Marking code: V2p.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
hFE
fT
GUM
F
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral
power gain
noise figure
open emitter
open base
Ts ≤ 97 °C; note 1
IC = 15 mA; VCE = 5 V
IC = 15 mA; VCE = 8 V
IC = 15 mA; VCE = 8 V; f = 1 GHz
IC = 5 mA; VCE = 8 V; f = 1 GHz
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
open emitter
open base
open collector
Ts ≤ 97 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
60
−
−
TYP.
−
−
−
−
100
8
14
MAX. UNIT
20 V
10 V
50 mA
300 mW
−
− GHz
− dB
− 1.3 − dB
MIN.
−
−
−
−
−
−65
−
MAX.
20
10
2.5
50
300
+150
175
UNIT
V
V
V
mA
mW
°C
°C
http://www.twtysemi.com
4008-318-123
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BFQ67.PDF ] | |
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